BLF548_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF push-pull power MOS transistor

Philips Semiconductors
UHF push-pull power MOS transistor
Product specification
BLF548
APPLICATION INFORMATION FOR CLASS-B OPERATION
T_h = 25 °C; R_{th mb-h} = 0.15 K/W, unless otherwise specified.
RF performance in a common source, push-pull, class-B test circuit.
MODE OF OPERATION
CW, class-B
f
(MHz)
500
V_DS
I_DQ
P_L
(V)
(mA)
(W)
28
2 x 160
150
G_p
(dB)
> 10
typ. 11
η_D
(%)
> 50
typ. 55
Ruggedness in class-B operation
The BLF548 is capable of withstanding a load mismatch
corresponding to VSWR = 10 through all phases under the
following conditions:
V_DS = 28 V; f = 500 MHz at rated output power.
handbook,²h⁰alfpage
GP
(dB)
16
GP
12
8
η_D
MRA527
100
η_D
(%)
80
60
40
4
20
0
0
0
50
100
150
200
PL (W)
Class-B operation; V_DS = 28 V; I_DQ = 2 × 160 mA;
f = 500 MHz; Z_L = 1.1 + j0.6 Ω (per section).
Fig.9 Power gain and efficiency as functions of
load power, typical values.
200
handbook, halfpage
PL
(W)
160
MRA531
120
80
40
0
0
10
20 _{PIN (W)} 30
Class-B operation; V_DS = 28 V; I_DQ = 2 × 160 mA;
f = 500 MHz; Z_L = 1.1 + j0.6 Ω (per section).
Fig.10 Load power as a function of input power,
typical values.
October 1992
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