BFR92AW_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92AW
30
handbook, halfpage
gain
(dB)
20
10
MGC885
MSG
GUM
30
handbook, halfpage
gain
(dB)
20
10
MGC886
MSG
GUM
0
0
5
10
15
20
IC (mA)
V_CE = 10 V; f = 500 MHz.
Fig.6 Gain as a function of collector current;
typical values.
0
0
5
10
15
20
IC (mA)
V_CE = 10 V; f = 1 GHz.
Fig.7 Gain as a function of collector current;
typical values.
50
hand_gbo_ao_ink, halfpage
(dB)
40
GUM
MSG
30
20
10
0
10
10²
MGC887
Gmax
10³
10⁴
f (MHz)
50
hand_gbo_ao_ink, halfpage
(dB)
GUM
40
MSG
30
20
10
0
10
10²
MGC888
Gmax
10³
10⁴
f (MHz)
V_CE = 10 V; I_C = 5 mA.
Fig.8 Gain as a function of frequency;
typical values.
1995 Sep 18
V_CE = 10 V; I_C = 15 mA.
Fig.9 Gain as a function of frequency;
typical values.
6