BFR505_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505
25
handbook, halfpage
gain
(dB)
20
15
10
5
0
0
4
MRA764
MSG
GUM
8
12
IC (mA)
V_CE = 6 V; f = 900 MHz.
Fig.6 Gain as a function of collector current.
25
handbook, halfpage
gain
(dB)
20
15
MSG
10
5
0
0
4
MRA765
Gmax
GUM
8
12
IC (mA)
V_CE = 6 V; f = 2 GHz.
Fig.7 Gain as a function of collector current.
handbook,⁵h⁰alfpage
gain
(dB)
GUM
40
30
MSG
20
10
0
10
10²
MRA766
Gmax
10³
10⁴
f (MHz)
V_CE = 6 V; I_c = 1.25 mA.
Fig.8 Gain as a function of frequency.
September 1995
handbook,⁵h⁰alfpage
gain
(dB)
GUM
40
30
MSG
20
10
0
10
10²
MRA767
Gmax
10³
10⁴
f (MHz)
V_CE = 6 V; I_c = 5 mA.
Fig.9 Gain as a function of frequency.
6