PBR941B_15 Datasheet, PDF (5/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF wideband transistor

Philips Semiconductors
UHF wideband transistor
Preliminary specification
PBR941B
handboo⁴k,⁰h⁰alfpage
Ptot
(mW)
300
MDA871
200
100
0
0
50
100
150
200
Ts (°C)
Fig.2 Power derating as a function of soldering
point temperature.
handboo¹k,⁶h⁰alfpage
hFE
120
MCD974
70
40
0
0
10
20
30
40
50
IC (mA)
V_CE = 6 V.
Fig.3 DC current gain as a function of collector
current; typical values.
handbook⁰, h^.5alfpage
Cre
(pF)
0.4
0.3
0.2
0.1
0
0
4
MGS498
8 _{VCB (V)} 12
I_C = I_c = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
2001 Jan 18
handbook,¹h⁰alfpage
fT
(GHz)
8
MCD975
6
4
2
0
0
10
20
30
40
50
IC (mA)
V_CE = 6 V; f_m = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
5