BLF544_2015 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF power MOS transistor

Philips Semiconductors
UHF power MOS transistor
Product specification
BLF544
handbook, h²alfpage
RDSon
(Ω)
1.6
MDA506
1.2
0.8
0.4
0
0
50
100 _{Tj (°C)} 150
I_D = 1.2 A; V_GS = 10 V.
Fig.6 Drain-source on-state resistance as a
function of junction temperature; typical
values.
100
handbook, halfpage
C
(pF)
80
60
40
20
0
0
10
MDA507
Cis
Cos
20
30
VDS (V)
V_GS = 0; f = 1 MHz.
Fig.7 Input and output capacitance as functions
of drain-source voltage; typical values.
handbook,⁴h⁰alfpage
Crs
(pF)
30
MDA508
20
10
0
0
10
20
30
VDS (V)
V_GS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage; typical values.
1998 Jan 21
5