BGD814_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – 860 MHz, 20 dB gain power

Philips Semiconductors
860 MHz, 20 dB gain power doubler amplifier
Product specification
BGD814
handboo^−k,⁵h⁰alfpage
CTB
(dB)
−60
MLD345
52
(1)
Vo
(dBmV)
48
handboo^−k,⁴h⁰alfpage
Xmod
(dB)
−50
MLD346
52
(1)
Vo
(dBmV)
48
−70
44
(2)
−80
(3)
40
(4)
−90
0
36
200
400
600
800 1000
f (MHz)
Z_S = Z_L = 75 Ω; V_B = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V_o.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
−60
44
(2)
(3)
(4)
−70
40
−80
0
36
200
400
600
800 1000
f (MHz)
Z_S = Z_L = 75 Ω; V_B = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V_o.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.3 Cross modulation as a function of frequency
under tilted conditions.
handboo^−k,⁶h⁰alfpage
CSO
(dB)
−70
−80
MLD347
52
(1)
(2)
Vo
(dBmV)
48
(3)
44
−90
40
(4)
−100
0
36
200
400
600
800 1000
f (MHz)
Z_S = Z_L = 75 Ω; V_B = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) V_o.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
5