BFR505T_2015 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR505T
handbook², ⁰ha⁰lfpage
h _FE
150
MRC019
100
50
0
10^−3 10^−2
10^−1
1
10
10²
IC (mA)
V_CE = 6 V; T_j = 25 °C.
Fig.3 DC current gain as a function of collector
current.
handbook,⁰h^.a⁵lfpage
C _re
(pF)
0.4
MRC011
0.3
0.2
0.1
0
0
2
4
6
8
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage.
12
handbo_fo_Tk, halfpage
(GHz)
10
8
6
4
2
0
10^−1
MRC013
VCE = 8 V
3V
1
10 _{IC (mA)} 10²
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current.
2000 May 17
5