BFQ67W_2015 Datasheet, PDF (5/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – BFQ67W_2015

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFQ67W
In Figs 6 to 9, G_UM = maximum unilateral power gain;
MSG = maximum stable gain; G_max = maximum available
gain.
handbook,²h⁰alfpage
gain
(dB)
15
10
MRC042
MSG
G _max
G _UM
5
0
0
5 10 15 20
V_CE = 8 V; f = 1 GHz; T_amb = 25 °C.
25 30 35
IC (mA)
Fig.6 Gain as a function of collector current.
handbook, h⁵a⁰lfpage
gain
(dB)
40
G _UM
MRC040
30
MSG
20
10
G _max
0
10^−2
10^−1
I_C = 5 mA; V_CE = 8 V; T_amb = 25 °C.
1 _{f (GHz)} 10
Fig.7 Gain as a function of frequency.
50
handbook, halfpage
gain
(dB)
40
G _UM
MRC041
30
MSG
20
10
G _max
0
10^−2
10^−1
1 _{f (GHz)} 10
I_C = 15 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.8 Gain as a function of frequency.
September 1995
50
handbook, halfpage
gain
(dB)
40
G _UM
30
MSG
20
10
MRC043
G _max
0
10^−2
10^−1
1
10
f (GHz)
I_C = 30 mA; V_CE = 8 V; T_amb = 25 °C.
Fig.9 Gain as a function of frequency.
5