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BFQ540_2015 Datasheet, PDF (5/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN wideband transistor | |||
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Philips Semiconductors
NPN wideband transistor
Product speciï¬cation
BFQ540
1.0
handbook, halfpage
Cre
(pF)
0.8
0.6
0.4
0.2
0
0
4
MRA688
8 VCB (V) 12
IC = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
12
handbook, halfpage
fT
(GHz)
8
4
MRA689
VCE = 8V
VCE = 4V
0
10â1
1
10 IC (mA) 102
f = 1 GHz; Tamb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
handbook,2h0alfpage
dim
(dB)
30
MBG242
handbdo2ok,2h0alfpage
(dB)
30
MBG243
40
40
50
50
60
70
10
20
30
40
50
60
IC (mA)
VCE = 8 V; Vo = 475 mV; RL = 50 â¦.
fp + fq â fr = 793.25 MHz; Tamb = 25 °C.
Fig.6 Intermodulation distortion as a function of
collector current; typical values.
60
70
10
20
30
40
50
60
IC (mA)
VCE = 8 V; Vo = 225 mV; RL = 50 â¦; fp + fq = 810 MHz;
Tamb = 25 °C.
Fig.7 Second order intermodulation distortion as
a function of collector current; typical
values.
2000 May 23
5
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