BFG520W_15 Datasheet, PDF (5/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistors

Philips Semiconductors
NPN 9 GHz wideband transistors
Product specification
BFG520W; BFG520W/X
150
handbook, halfpage
h _FE
100
MLB807
handbook⁰, ^.h⁶alfpage
C _re
(pF)
0.4
MLB808
50
0.2
0
10 ¹
1
10 _{I C (mA)} 10²
V_CE = 6 V.
Fig.3 DC current gain as a function of collector
current; typical values.
0
0
2.5
5
7.5
10
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
12
handbook, halfpage
fT
(GHz)
8
4
MLB809
VCE =
6V
3V
0
1
10
I _C (mA)
10 ²
f = 1 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5