BFG21W_15 Datasheet, PDF (5/12 Pages) NXP Semiconductors – UHF power transistor

Philips Semiconductors
UHF power transistor
Product specification
BFG21W
handbook, full pagewidth
VC
R1
R2
TR1
C3
RF input
50 Ω
L1
C1
L2
C2
VS
L5
R3 ^C7
C6
L3
DUT
L4
C5
RF output
50 Ω
C4
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT
DESCRIPTION
C1, C5
multilayer ceramic chip capacitor; note 1
C2
multilayer ceramic chip capacitor; note 1
C3, C6
multilayer ceramic chip capacitor, note 1
C4
multilayer ceramic chip capacitor; note 1
C7
multilayer ceramic chip capacitor; note 1
L1, L4
stripline; note 2
L2
stripline; note 2
L3
stripline; note 2
L5
Grade 4S2 Ferroxcube chip bead
R1
metal film resistor
R2, R3
metal film resistor
TR1
NPN transistor
VALUE
24 pF
3.3 pF
15 pF
2.4 pF
1 nF
100 Ω
50 Ω
50 Ω
220 Ω; 0.4 W
10 Ω; 0.4 W
BC817
DIMENSIONS CATALOGUE No.
18 × 0.2 mm
3.2 × 0.8 mm
4.6 × 0.8 mm
4330 030 36300
9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (ε_r = 6.15,
tan δ = 0.0019); thickness 0.64 mm, copper cladding = 35 µm.
1998 Jul 06
5