BLF246_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – VHF power MOS transistor

Philips Semiconductors
VHF power MOS transistor
Product specification
BLF246
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V_(BR)DSS
I_DSS
I_GSS
V_GSth
∆V_GS
g_fs
R_DSon
I_DSX
C_is
C_os
C_rs
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
V_GS = 0; I_D = 50 mA
V_GS = 0; V_DS = 28 V
V_GS = ±20 V; V_DS = 0
I_D = 50 mA; V_DS = 10 V
I_D = 50 mA; V_DS = 10 V
MIN.
65
−
−
2
−
TYP.
−
−
−
−
−
MAX. UNIT
−
V
2.5 mA
1
µA
4.5 V
100 mV
I_D = 2.5 A or 5 A; V_DS = 10 V 3
I_D = 5 A; V_GS = 10 V
−
V_GS = 10 V; V_DS = 10 V
−
V_GS = 0; V_DS = 28 V; f = 1 MHz −
V_GS = 0; V_DS = 28 V; f = 1 MHz −
V_GS = 0; V_DS = 28 V; f = 1 MHz −
4.2 −
S
0.2 0.3 Ω
22
−
A
225 −
pF
180 −
pF
25
−
pF
2
handbook, halfpage
T.C.
(mV/K)
0
MGG105
handbook,⁴h⁰alfpage
ID
(A)
30
MGG106
−2
20
−4
10
−6
10^−2
10^−1
1
ID (A) ¹⁰
V_DS = 10 V; valid for T_h = 25 to 70 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
0
0
5
10
15
20
VGS (V)
V_DS = 10 V; T_j = 25 °C.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
1996 Oct 21
4