BFS17_2015 Datasheet, PDF (4/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 1 GHz wideband transistor

Philips Semiconductors
NPN 1 GHz wideband transistor
Product specification
BFS17
100
handbook, halfpage
hFE
50
MEA395
0
0
10
20
30
IC (mA)
V_CE = 1 V; T_j = 25 °C.
Fig.2 DC current gain as a function of
collector current.
2.0
handbook, halfpage
Cc
(pF)
1.6
1.2
0.8
0.4
0
0
10
MEA396
20
30
VCB (V)
I_E = i_e = 0; f = 1 MHz; T_j = 25 °C.
Fig.3 Collector capacitance as a function of
collector-base voltage.
handbook, h²alfpage
fT
(GHz)
1
MEA393
handbook,¹h⁰alfpage
F
(dB)
5
MEA397
0
0
10
20 _{IC (mA)} 30
V_CE = 5 V; f = 500 MHz; T_j = 25 °C.
Fig.4 Transition frequency as a function of
collector current.
September 1995
0
0
4
8
12
16
20
IC (mA)
V_CE = 5 V; R_S = 50 Ω; f = 500 MHz; T_j = 25 °C.
Fig.5 Minimum noise figure as a function of
collector current.
4