BFR92A_2015 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92A
handbook, full pagewidth
2.2 nF
VBB
33 kΩ
L3
L2 1 nF
75 Ω
input
L1
1 nF
300 Ω DUT
2.2 nF
VCC
1 nF
75 Ω
output
3.3 pF
18 Ω
0.82 pF
MBB269
L1 = L3 = 5 µH choke.
L2 = 3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
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Ptot
(mW)
300
MEA425 - 1
200
100
0
0
50
100
150
200
Ts (^o C)
Fig.3 Power derating curve.
1997 Oct 29
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h _FE
80
MCD074
40
0
0
10
20 _{IC (mA)} 30
V_CE = 10 V; T_j = 25 °C.
Fig.4 DC current gain as a function of collector
current; typical values.
4