|
BFG541_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
|
◁ |
Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFG541
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
S212
F
insertion power gain
noise ï¬gure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
Vo
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
Ic = 40 mA; VCE = 8 V; RL = 50 â¦;
f = 900 MHz; Tamb = 25 °C
note 2
note 3
note 4
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log ï£ï£«----1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
2. IC = 40 mA; VCE = 8 V; RL = 50 â¦; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2pâq) = 898 MHz and at f(2pâq) = 904 MHz.
MIN. TYP. MAX. UNIT
â
â
50 nA
60 120 250
â
2
â
pF
â
1
â
pF
â
0.7 â
pF
â
9
â
GHz
â
15 â
dB
â
9
â
dB
13 14 â
dB
â
1.3 1.8 dB
â
1.9 2.4 dB
â
2.1 â
dB
â
21 â
dBm
â
34 â
â
500 â
â
â50 â
dBm
mV
dB
3. dim = â60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = Zs = 75 â¦; Tamb = 25 °C;
Vp = Vo; Vq = Vo â6 dB; Vr = Vo â6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+qâr) = 793.25 MHz
4. IC = 40 mA; VCE = 8 V; Vo = 325 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz;
measured at f(p+q) = 810 MHz
September 1995
4
|
▷ |