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BFG540_2015 Datasheet, PDF (4/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFG540; BFG540/X;
BFG540/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
ICBO
collector cut-off current
hFE
DC current gain
Ce
emitter capacitance
Cc
collector capacitance
Cre
feedback capacitance
fT
transition frequency
GUM
maximum unilateral power gain
(note 1)
s21 2
F
insertion power gain
noise ï¬gure
PL1
output power at 1 dB gain
compression
ITO
third order intercept point
VO
output voltage
d2
second order intermodulation
distortion
CONDITIONS
IE = 0; VCB = 8 V
IC = 40 mA; VCE = 8 V
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz;
Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 40 mA; VCE = 8 V;
f = 900 MHz; Tamb = 25 °C
Îs = Îopt; IC = 10 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; RL = 50 â¦;
f = 900 MHz; Tamb = 25 °C
note 2
note 3
note 4
MIN.
â
60
â
â
â
â
â
â
15
â
â
â
â
â
â
â
TYP.
â
120
2
0.9
0.5
9
18
11
16
1.3
1.9
2.1
21
34
500
â50
MAX. UNIT
50
nA
250
â
pF
â
pF
â
pF
â
GHz
â
dB
â
dB
â
dB
1.8 dB
2.4 dB
â
dB
â
dBm
â
dBm
â
mV
â
dB
Notes
1. GUM is the maximum unilateral power gain, assuming s12 is zero and GUM = 10 log (---1-----â------s---1---1---s-2---2)--1(---1-2----â------s---2--2-----2---) dB.
2. VCE = 8 V; IC = 40 mA; RL = 50 â¦; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p â q) = 898 MHz and f(2q â p) = 904 MHz.
3. dim = â60 dB (DIN 45004B); IC = 40 mA; VCE = 8 V; ZL = ZS = 75 â¦; Tamb = 25 °C;
Vp = VO; Vq = VO â6 dB; Vr = VO â6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p + q â r) = 793.25 MHz.
4. IC = 40 mA; VCE = 8 V; VO = 275 mV; Tamb = 25 °C;
fp = 250 MHz; fq = 560 MHz; measured at f(p + q) = 810 MHz.
2000 May 23
4
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