English
Language : 

BFG424W_2015 Datasheet, PDF (4/13 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 25 GHz wideband transistor
◁
Philips Semiconductors
BFG424W
NPN 25 GHz wideband transistor
7. Characteristics
Table 7: Characteristics
Tj = 25 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ
V(BR)CBO collector-base
IC = 2.5 µA; IE = 0 mA
breakdown voltage
10 -
V(BR)CEO collector-emitter
IC = 1 mA; IB = 0 mA
breakdown voltage
4.5 -
V(BR)EBO open-collector
emitter-base
breakdown voltage
IE = 2.5 µA; IC = 0 mA
1
-
ICBO
collector-base
cut-off current
IE = 0 mA; VCB = 4.5 V
-
-
hFE
CCES
DC current gain
collector-emitter
capacitance
IC = 25 mA; VCE = 2 V
VCB = 2 V; f = 1 MHz
50 80
-
385
CEBS
emitter-base
capacitance
VEB = 0.5 V; f = 1 MHz
-
515
CCBS
collector-base
capacitance
VCB = 2 V; f = 1 MHz
-
105
fT
transition frequency IC = 25 mA; VCE = 2 V; f = 2 GHz;
-
25
Tamb = 25 °C
Gp(max) maximum power
IC = 25 mA; VCE = 2 V; f = 2 GHz; [1] -
22
gain
Tamb = 25 °C
|s21|2
insertion power gain IC = 25 mA; VCE = 2 V; f = 2 GHz;
-
18
Tamb = 25 °C
NF
noise figure
IC = 2 mA; VCE = 2 V;
f = 900 MHz; ΓS = Γopt
-
0.8
IC = 2 mA; VCE = 2 V; f = 2 GHz;
-
1.2
ΓS = Γopt
PL(1dB) output power at
IC = 25 mA; VCE = 2 V; f = 2 GHz; [2] -
12
1 dB gain
ZS = ZS(opt); ZL = ZL(opt)
compression
IP3
third-order intercept IC = 25 mA; VCE = 2 V; f = 2 GHz; [2] -
22
point
ZS = ZS(opt); ZL = ZL(opt)
[1] Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = MSG, see Figure 8.
[2] ZS is optimized for noise; ZL is optimized for gain.
Max Unit
-
V
-
V
-
V
15 nA
120
-
fF
-
fF
-
fF
-
GHz
-
dB
-
dB
-
dB
-
dB
-
dBm
-
dBm
BFG424W_1
Product data sheet
Rev. 01 — 21 March 2006
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
4 of 13
 ▷