BFG198_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor

Philips Semiconductors
NPN 8 GHz wideband transistor
Product specification
BFG198
handbook, full pagewidth
VBB
input
75 Ω

, ^C3
C1 L1
R1
L2
L4
L3 C4
L5
R2
DUT
VCC = 8 V
C5
L6
C6
output
75 Ω
C2
R3 R4
MBB754
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
DESCRIPTION
C2
multilayer ceramic capacitor
C1, C4, C6, C7 multilayer ceramic capacitor
C3
multilayer ceramic capacitor
C5 (note 1)
multilayer ceramic capacitor
C8
multilayer ceramic capacitor
L1 (note 1)
1.5 turns 0.4 mm copper wire
L2
microstripline
L3 (note 1)
L4 (note 1)
L5
0.4 mm copper wire
0.4 mm copper wire
microstripline
L6
R1
R2 (note 1)
R3, R4
Ferroxcube choke
metal film resistor
metal film resistor
metal film resistor
VALUE UNIT
1.2
pF
10
nF
10
nF
10
nF
1.5
pF
75
Ω
≈24
nH
≈3.6
nH
75
Ω
5
µH
10
Ω
220
Ω
30
Ω
DIMENSIONS
int. dia. 3 mm;
winding pitch 1 mm
length 22 mm;
width 2.5 mm
length 30 mm
length 4 mm
length 19 mm;
width 2.5 mm
CATALOGUE NO.
2222 851 12128
2222 590 08627
2222 851 12128
2222 629 08103
2222 851 12158
3122 108 20153
2322 180 73103
2322 180 73221
2322 180 73309
Note
1. Components C5, L1, L3, L4, and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε_r = 2.2);
thickness ¹â„₁₆ inch; thickness of copper sheet 2 x 35 µm; see Fig.2.
1995 Sep 12
4