BFG135_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7GHz wideband transistor

Philips Semiconductors
NPN 7GHz wideband transistor
Product specification
BFG135

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VBB
C3
R1
C1 L1
L2
input
75 Ω
L6 C4
R2
L3
DUT
VCC
C5
L5
C6
L4
output
75 Ω
C7
C2
R3 R4
MBB284
Fig.2 Intermodulation distortion and second order intermodulation distortion test circuit.
List of components (see test circuit)
DESIGNATION
C1, C3, C5, C6
C2, C7
C4 (note 1)
L1
DESCRIPTION
multilayer ceramic capacitor
multilayer ceramic capacitor
miniature ceramic plate capacitor
microstripline
VALUE
10
1
10
75
UNIT
nF
pF
nF
Ω
L2
microstripline
75
Ω
L3 (note 1)
1.5 turns 0.4 mm copper wire
L4
microstripline
75
Ω
L5
L6 (note 1)
R1
R2 (note 1)
R3, R4
Ferroxcube choke
0.4 mm copper wire
metal film resistor
metal film resistor
metal film resistor
5
µH
≈25
nH
10
kΩ
200
Ω
27
Ω
DIMENSIONS
length 7 mm;
width 2.5 mm
length 22mm;
width 2.5 mm
int. dia. 3 mm;
winding pitch 1 mm
length 19 mm;
width 2.5 mm
length 30 mm
CATALOGUE NO.
2222 590 08627
2222 851 12108
2222 629 08103
3122 108 20153
2322 180 73103
2322 180 73201
2322 180 73279
Note
1. Components C4, L3, L6 and R2 are mounted on the underside of the PCB.
The circuit is constructed on a double copper-clad printed circuit board with PTFE dielectric (ε_r = 2.2); thickness
1_{⁄16 inch; thickness of copper sheet} 1_{⁄32 inch.}
1995 Sep 13
4