BF861_15 Datasheet, PDF (4/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel junction FETs

Philips Semiconductors
N-channel junction FETs
Product specification
BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-a}
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
VALUE
500
UNIT
K/W
CHARACTERISTICS
T_j = 25 °C; V_DS = 8 V; V_GS = 0; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V_(BR)GSS
V_GSoff
V_GSS
I_DSS
I_GSS
y_fs
g_os
C_iss
C_rss
V_n/√B
gate-source breakdown voltage I_G = −1 µA
gate-source cut-off voltage
I_D = 1 µA
BF861A
BF861B
BF861C
gate-source forward voltage
drain current
V_DS = 0; I_G = 1 mA
BF861A
BF861B
BF861C
gate cut-off current
forward transfer admittance
V_GS = −20 V; V_DS = 0
BF861A
BF861B
BF861C
common source output
conductance
BF861A
BF861B
BF861C
input capacitance
f = 1 MHz
reverse transfer capacitance f = 1 MHz
equivalent input noise voltage V_GS = 0; f = 1 MHz
MIN.
−25
TYP.
−
MAX.
−
UNIT
V
−0.2
−
−0.5
−
−0.8
−
−
−
−1
V
−1.5
V
−2
V
1
V
2
−
6
−
12
−
−
−
6.5
mA
15
mA
25
mA
−1
nA
12
−
16
−
20
−
20
mS
25
mS
30
mS
−
−
200
µS
−
−
250
µS
−
−
300
µS
−
−
10
pF
−
2.1
2.7
pF
−
1.5
−
nV/√Hz
1997 Sep 04
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