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BF1203_2015 Datasheet, PDF (4/20 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOS-FET
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Philips Semiconductors
Dual N-channel dual gate MOS-FET
Product specification
BF1203
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
Per MOS-FET unless otherwise specified
V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0; ID = 10 µA
10
−
V
V(BR)G1-SS gate-source breakdown voltage VGS = VDS = 0; IG1-S = 10 mA
6
10
V
V(BR)G2-SS gate-source breakdown voltage VGS = VDS = 0; IG2-S = 10 mA
6
10
V
V(F)S-G1 forward source-gate voltage
VG2-S = VDS = 0; IS-G1 = 10 mA
0.5 1.5 V
V(F)S-G2 forward source-gate voltage
VG1-S = VDS = 0; IS-G2 = 10 mA
0.5 1.5 V
VG1-S(th) gate-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA
0.3 1
V
VG2-S(th) gate-source threshold voltage VDS = 5 V; VG1-S = 4 V; ID = 100 µA
0.3 1.2 V
IDSX
drain-source current
amp. a:
11
19
mA
VG2-S = 4 V; VDS = 5 V; RG = 62 kΩ; note 1
amp. b:
8
16
mA
VG2-S = 4 V; VDS = 5 V; RG = 120 kΩ; note 1
IG1-S
gate cut-off current
VG1-S = 5 V; VG2-S = VDS = 0
−
50
nA
IG2-S
gate cut-off current
VG2-S = 5 V; VG1-S = VDS = 0
−
20
nA
Note
1. RG1 connects gate 1 to VGG = 5 V.
2001 Apr 25
4
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