BAP64-05W_15 Datasheet, PDF (4/8 Pages) NXP Semiconductors – Silicon PIN diode

Philips Semiconductors
Silicon PIN diode
Product specification
BAP64-05W
GRAPHICAL DATA
10²
handbook, halfpage
rD
(Ω)
10
MLD365
1
10^−₁¹_0−1
1
10
10²
IF (mA)
f = 100 MHz; T_j = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
500
handbook, halfpage
Cd
(fF)
400
MLD366
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 1 MHz; T_j = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
handbook, h⁰alfpage
s21 ²
(dB)
−0.5
−1
−1.5
(1) (2)
(3)
(4)
MLD367
−2
−2.5
0.5
1
1.5
2
(1) I_F = 100 mA.
(2) I_F = 10 mA.
(3) I_F = 1 mA.
(4) I_F = 0.5 mA.
2.5
3
f (GHz)
Diode inserted in series with a 50 Ω stripline circuit and
biased via the analyzer Tee network.
T_amb = 25 °C.
Fig.4 Insertion loss (|s₂₁|²) of the diode as a
function of frequency; typical values.
2000 Jul 13
0
handbook, halfpage
s21 ²
(dB)
−5
MLD368
−10
−15
−20
−25
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T_amb = 25 °C.
Fig.5 Isolation (|s₂₁|²) of the diode as a function of
frequency; typical values.
4