BAP51-05W_15 Datasheet, PDF (4/8 Pages) NXP Semiconductors – General purpose PIN diode

Philips Semiconductors
General purpose PIN diode
Product specification
BAP51-05W
GRAPHICAL DATA
10²
handbook, halfpage
rD
(Ω)
10
MLD507
1
10^−₁¹_0−1
1
10
10²
IF (mA)
f = 100 MHz; T_j = 25 °C.
Fig.2 Forward resistance as a function of forward
current; typical values.
handboo⁵k,⁰h⁰alfpage
Cd
(fF)
400
MLD508
300
200
100
0
0
4
8
12
16
20
VR (V)
f = 100 MHz; T_j = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
0
handbook, halfpage
|S21| ²
(dB)
− 0.5
−1
(1) (2) (3)
MGS659
−1.5
−2
− 2.5
0.5
1
1.5
2
2.5
3
f (GHz)
(1) I_F = 10 mA.
(2) I_F = 1 mA
(3) I_F = 0.5 mA
Diode inserted in series with a 50 Ω stripline circuit and biased via the
analyzer Tee network. T_amb = 25 °C.
Fig.4 Insertion loss (|s₂₁|²) of the diode as a
function of frequency; typical values.
handbook, h⁰alfpage
s21 ²
(dB)
−10
MLD509
−20
−30
−40
−50
0.5
1
1.5
2
2.5
3
f (GHz)
Diode zero biased and inserted in series with a 50 Ω stripline circuit.
T_amb = 25 °C.
Fig.5 Isolation (|s₂₁|²) of the diode as a function of
frequency; typical values.
2001 Jan 23
4