BGD816L_2015 Datasheet, PDF (3/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – 860 MHz, 21.5 dB gain power

Philips Semiconductors
860 MHz, 21.5 dB gain power doubler amplifier
Product specification
BGD816L
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V_B = 24 V; T_mb = 35 °C; Z_S = Z_L = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
G_p
SL
FL
s₁₁
s₂₂
s₂₁
CTB
X_mod
power gain
f = 45 MHz
21.2 −
f = 870 MHz
22
−
slope straight line
f = 45 to 870 MHz; note 1
0.5 1
flatness straight line f = 45 to 100 MHz
−
−
f = 100 to 800 MHz
−
−
f = 800 to 870 MHz
−0.4 −
input return losses
f = 45 to 80 MHz
22
−
f = 80 to 160 MHz
21
−
f = 160 to 320 MHz
19
−
f = 320 to 550 MHz
18
−
f = 550 to 650 MHz
17
−
f = 650 to 750 MHz
16
−
f = 750 to 870 MHz
15
−
f = 870 to 914 MHz
12
−
output return losses f = 45 to 80 MHz
25
−
f = 80 to 160 MHz
23
−
f = 160 to 320 MHz
18
−
f = 320 to 550 MHz
17
−
f = 550 to 650 MHz
16
−
f = 650 to 750 MHz
15
−
f = 750 to 870 MHz
15
−
f = 870 to 914 MHz
12
−
phase response
f = 50 MHz
−45 −
composite triple beat 79 chs flat; V_o = 44 dBmV; f_m = 547.25 MHz −
−
112 chs flat; V_o = 44 dBmV; f_m = 745.25 MHz −
−
132 chs flat; V_o = 44 dBmV; f_m = 859.25 MHz −
−
112 chs; f_m = 547.25 MHz; V_o = 48.2 dBmV at −
−
745 MHz; note 2
79 chs; f_m = 331.25 MHz; V_o = 45.3 dBmV at −
−
547 MHz; note 3
cross modulation
79 chs flat; V_o = 44 dBmV; f_m = 55.25 MHz −
−
112 chs flat; V_o = 44 dBmV; f_m = 55.25 MHz −
−
132 chs flat; V_o = 44 dBmV; f_m = 55.25 MHz −
−
112 chs; f_m = 745.25 MHz; V_o = 48.2 dBmV at −
−
745 MHz; note 2
79 chs; f_m = 445.25 MHz; V_o = 45.3 dBmV at −
−
547 MHz; note 3
21.8 dB
23
dB
1.5 dB
±0.25 dB
±0.5 dB
0.1 dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
−
dB
+45 deg
−66 dB
−59.5 dB
−55 dB
−59 dB
−68.5 dB
−64 dB
−61 dB
−58 dB
−60 dB
−66 dB
2001 Nov 15
3