|
BFQ67W_15 Datasheet, PDF (3/10 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 8 GHz wideband transistor | |||
|
◁ |
Philips Semiconductors
NPN 8 GHz wideband transistor
Product speciï¬cation
BFQ67W
THERMAL RESISTANCE
SYMBOL
Rth j-s
PARAMETER
thermal resistance from junction to
soldering point
CONDITIONS
up to Ts = 118 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C, unless otherwise speciï¬ed.
SYMBOL
PARAMETER
CONDITIONS
ICBO
hFE
Cc
Ce
Cre
fT
GUM
F
collector cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
transition frequency
maximum unilateral power gain
(note 1)
noise ï¬gure
IE = 0; VCB = 5 V
IC = 15 mA; VCE = 5 V
IE = ie = 0; VCB = 8 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IC = 0; VCB = 8 V; f = 1 MHz
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 1 GHz
Tamb = 25 °C
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb = 25 °C
Îs = Îopt; IC = 5 mA; VCE = 8 V;
f = 1 GHz
Îs = Îopt; IC = 15 mA; VCE = 8 V;
f = 1 GHz
Îs = Îopt; IC = 5 mA; VCE = 8 V;
f = 2 GHz
IC = 5 mA; VCE = 8 V;
f = 2 GHz; Zs = 60 â¦
Îs = Îopt; IC = 15 mA; VCE = 8 V;
f = 2 GHz
IC = 5 mA; VCE = 8 V;
f = 2 GHz; Zs = 60 â¦
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
GUM = 10 log -ï£ï£«---1-----â------S----1---1----2S----2--ï£ï£«-1---1-2----â------S----2--2-----2---- dB.
THERMAL RESISTANCE
190 K/W
MIN. TYP. MAX. UNIT
â
â
50
60 100 â
â
0.7 â
â
1.3 â
â
0.5 â
â
8
â
nA
pF
pF
pF
GHz
â
13 â
dB
â
8
â
dB
â
1.3 â
dB
â
2
â
dB
â
2.2 â
dB
â
2.5 â
dB
â
2.7 â
dB
â
3
â
dB
September 1995
3
|
▷ |