BFQ591_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFQ591
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
T_s ≤ 90 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction
to soldering point
CONDITIONS
T_s ≤ 90 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector pin.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
200
2.25
+150
175
UNIT
V
V
V
mA
W
°C
°C
VALUE
38
UNIT
K/W
2002 Feb 04
3