BFG591_15 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 7 GHz wideband transistor

Philips Semiconductors
NPN 7 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
up to T_s = 80 °C; note 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to
soldering point
CONDITIONS
note 1
Note to the Limiting values and Thermal characteristics
1. T_s is the temperature at the soldering point of the collector pin.
Product specification
BFG591
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
3
200
2
+150
150
UNIT
V
V
V
mA
W
°C
°C
VALUE
35
UNIT
K/W
1995 Sep 04
3