BF998WR_2015 Datasheet, PDF (3/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – N-channel dual-gate MOS-FET

Philips Semiconductors
N-channel dual-gate MOS-FET
Product specification
BF998WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_DS
I_D
I_G1
I_G2
P_tot
T_stg
T_j
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
storage temperature
operating junction temperature
CONDITIONS
MIN.
−
−
−
−
up to T_amb = 45 °C; see Fig.2; note 1 −
−65
−
Note
1. Device mounted on a printed-circuit board.
MAX.
12
30
±10
±10
300
+150
+150
UNIT
V
mA
mA
mA
mW
°C
°C
400
handbook, halfpage
Ptot
(mW)
300
MLD154
200
100
0
0
50
100
150
200
Tamb (^oC)
Fig.2 Power derating curve.
1997 Sep 05
3