BF1207_2015 Datasheet, PDF (3/22 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOSFET

Philips Semiconductors
BF1207
Dual N-channel dual gate MOSFET
3. Ordering information
Table 3: Ordering information
Type number Package
Name Description
BF1207
-
plastic surface mounted package; 6 leads
4. Marking
Table 4: Marking
Type number
BF1207
[1] * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
5. Limiting values
Marking code ^[1]
M2*
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per MOSFET
V_DS
drain-source voltage
I_D
drain current
I_G1
gate1 current
I_G2
gate2 current
P_tot
total power dissipation
T_stg
storage temperature
T_j
junction temperature
DC
DC
T_sp ≤ 107 °C
-
-
-
-
[1] _-
−65
-
[1] T_sp is the temperature at the soldering point of the source lead.
Max
6
30
±10
±10
180
+150
150
Version
SOT363
Unit
V
mA
mA
mA
mW
°C
°C
9397 750 14955
Product data sheet
Rev. 01 — 28 July 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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