BF1203_15 Datasheet, PDF (3/20 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOS-FETs

Philips Semiconductors
Dual N-channel dual gate MOS-FET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
Per MOS-FET unless otherwise specified
V_DS
drain-source voltage
I_D
drain current (DC)
I_G1
gate 1 current
I_G2
gate 2 current
P_tot
total power dissipation
T_stg
storage temperature
T_j
operating junction temperature
T_s ≤ 102 °C; note 1
Note
1. T_s is the temperature at the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R_{th j-s}
thermal resistance from junction to soldering point
Product specification
BF1203
MIN.
MAX.
UNIT
−
10
V
−
30
mA
−
±10
mA
−
±10
mA
−
200
mW
−65
+150
°C
−
150
°C
VALUE
240
UNIT
K/W
250
handbo_Po_tk_o, _thalfpage
(mW)
200
150
100
50
0
0
50
MGS359
100
150
200
Ts (°C)
Fig.2 Power derating curve.
2001 Apr 25
3