BF1100_15 Datasheet, PDF (3/14 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual-gate MOS-FETs

Philips Semiconductors
Dual-gate MOS-FETs
Product specification
BF1100; BF1100R
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V_DS
I_D
I_G1
I_G2
P_tot
T_stg
T_j
PARAMETER
drain-source voltage
drain current
gate 1 current
gate 2 current
total power dissipation
BF1100
BF1100R
storage temperature
operating junction temperature
CONDITIONS
MIN.
−
−
−
−
see Fig.3
up to T_amb = 50 °C; note 1 −
up to T_amb = 40 °C; note 1 −
−65
−
Note
1. Device mounted on a printed-circuit board.
MAX.
14
30
±10
±10
200
200
+150
+150
UNIT
V
mA
mA
mA
mW
mW
°C
°C
250
handbook, halfpage
Ptot
(mW)
200
MLD155
150
BF1100R BF1100
100
50
0
0
50
100
150
200
Tamb (^oC)
Fig.3 Power derating curves.
40
Yfs
(mS)
30
MLD156
20
10
0
50
0
50
100
150
Tj (^oC)
Fig.4 Forward transfer admittance as a function
of junction temperature; typical values.
1995 Apr 25
3