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BB201_2015 Datasheet, PDF (3/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Low-voltage variable capacitance double diode | |||
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Philips Semiconductors
Low-voltage variable capacitance double diode
Product speciï¬cation
BB201
CHARACTERISTICS
Tj = 25 °C unless otherwise speciï¬ed.
SYMBOL
PARAMETER
Per diode
IR
reverse current
rS
diode series resistance
Cd
diode capacitance
C--C---d--d-(--7(--1.--5-V-V--)--)
capacitance ratio
CONDITIONS
VR = 15 V
VR = 15 V; Tj = 85 °C
f = 100 MHz; VR = 3 V
VR = 1 V; f = 1 MHz
VR = 3 V; f = 1 MHz
VR = 7.5 V; f = 1 MHz
VR = 8 V; f = 1 MHz
f = 1 MHz
MIN.
TYP.
MAX.
UNIT
â
â
10
nA
â
â
200
nA
â
0.25
0.5
â¦
89
95
102
pF
â
60
â
pF
25.5
27.6
29.7
pF
â
25.5
â
pF
3.1
â
3.8
GRAPHICAL DATA
140
handboCokd, full pagewidth
(pF)
120
100
80
60
40
20
0
10â1
1
10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGU477
102
2001 Oct 12
3
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