BB201_15 Datasheet, PDF (3/8 Pages) NXP Semiconductors – Low-voltage variable capacitance double diode

Philips Semiconductors
Low-voltage variable capacitance double diode
Product specification
BB201
CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
Per diode
I_R
reverse current
r_S
diode series resistance
C_d
diode capacitance
C--C---_d^--d-₍^--₇^(--1.--₅^-V-_V^--)--₎
capacitance ratio
CONDITIONS
V_R = 15 V
V_R = 15 V; T_j = 85 °C
f = 100 MHz; V_R = 3 V
V_R = 1 V; f = 1 MHz
V_R = 3 V; f = 1 MHz
V_R = 7.5 V; f = 1 MHz
V_R = 8 V; f = 1 MHz
f = 1 MHz
MIN.
TYP.
MAX.
UNIT
−
−
10
nA
−
−
200
nA
−
0.25
0.5
Ω
89
95
102
pF
−
60
−
pF
25.5
27.6
29.7
pF
−
25.5
−
pF
3.1
−
3.8
GRAPHICAL DATA
140
handbo_Cok_d, full pagewidth
(pF)
120
100
80
60
40
20
0
10^−1
1
10
VR (V)
Fig.2 Diode capacitance as a function of reverse voltage; typical values.
MGU477
10²
2001 Oct 12
3