BAP64-02_2015 Datasheet, PDF (3/8 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon PIN diode

Philips Semiconductors
Silicon PIN diode
Product specification
BAP64-02
ELECTRICAL CHARACTERISTICS
T_j = 25 °C unless otherwise specified.
SYMBOL
V_F
I_R
PARAMETER
forward voltage
reverse leakage current
C_d
diode capacitance
r_D
diode forward resistance
τ_L
charge carrier life time
L_S
series inductance
CONDITIONS
TYP.
I_F = 50 mA
V_R =175 V
V_R = 20 V
V_R = 0; f = 1 MHz
V_R = 1 V; f = 1 MHz
V_R = 20 V; f = 1 MHz
f = 100 MHz; note 1
0.95
−
−
0.48
0.35
0.23
I_F = 0.5 mA
I_F = 1 mA
I_F = 10 mA
I_F = 100 mA
when switched from I_F = 10 mA to
I_R = 6 mA; R_L = 100 Ω;
measured at I_R = 3 mA
20
10
2
0.7
1.55
0.6
MAX. UNIT
1.1 V
10
µA
1
µA
−
pF
−
pF
0.35 pF
40
Ω
20
Ω
3.8 Ω
1.35 Ω
−
µs
−
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R_{th j-s}
PARAMETER
thermal resistance from junction to soldering point
VALUE
85
UNIT
K/W
2000 Mar 23
3