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MJE18008_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
MJE18008
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
VCEsat-1 Collector-emitter saturation voltage
VCEsat-2 Collector-emitter saturation voltage
CONDITIONS
IC=0.1A L=25mH
IC=2A IB=0.2A
TC=125
IC=4.5A IB=0.9A
TC=125
VBEsat-1
VBEsat-2
Emitter-base saturation voltage
Emitter-base saturation voltage
IC=2A IB=0.2A
IC=4.5A IB=0.9A
ICES
Collector cut-off current
ICEO
Collector cut-off current
VCES=RatedVCES;
VEB=0
VCES=800V
TC=125
VCE=RatedVCEO; IB=0
IEBO
Emitter cut-off current
VEB=9V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=4.5A ; VCE=1V
hFE-3
DC current gain
IC=2A ; VCE=1V
hFE-4
DC current gain
IC=10mA ; VCE=5V
fT
Transition frequency
IC=0.5A ; VCE=10V
COB
Collector outoput capacitance
f=1MHz ; VCB=10V
Switching times resistive load,Duty Cycle 10%,Pulse Width=20 s
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=2A
IB1=0.2A; IB2=1.0A
ton
Turn-on time
toff
Turn-off time
VCC=300V ,IC=4.5A
IB1=0.9A; IB2=2.25A
MIN TYP. MAX UNIT
450
V
0.6
V
0.65
0.7
V
0.8
1.10
V
1.25
V
0.1
0.5
mA
0.1
0.1
mA
0.1
mA
14
34
6
11
10
13
MHz
100
pF
0.3
s
2.5
s
0.18
s
2.5
s
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