BUW35_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors

Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V_CEO
Collector-emitter sustaining voltage I_C=100mA ; I_B=0
V_CEsat Collector-emitter saturation voltage I_C=8A; I_B=2.5A
V_BEsat
I_CES
I_EBO
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
I_C=8A; I_B=2.5A
V_CE=800V ;V_BE=0
T_C=125
V_EB=7V; I_C=0
h_FE-1
DC current gain
I_C=1A ; V_CE=5V
h_FE-2
DC current gain
I_C=5A ; V_CE=5V
Switching times
t_on
Turn-on time
t_s
Storage time
t_f
Fall time
I_C=5A ;I_B1=- I_B2=1A
V_CC=250V
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BUW35
MIN TYP. MAX UNIT
400
V
1.5
V
1.8
V
0.1
3.0
mA
1
mA
15
50
8
0.7
s
3.0
s
0.8
s
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