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BUV46A_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon Power Transistors
Product Specification
Silicon Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
CONDITIONS
IC=100mA ;IB=0
VCEsat-1 Collector-emitter saturation voltage IC=2A IB=0.4A
VCEsat-2 Collector-emitter saturation voltage IC=3A IB=0.6A
VBEsat-1
ICBO
IEBO
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
IC=2A IB=0.4A
VCB=BVCBO IE=0
TC=125
VEB=7V IC=0
Switching times resistive load
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=2A IB1=- IB2=0.4A
VCC=150V
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BUV46A
MIN
TYP.
MAX UNIT
450
V
1.5
V
5.0
V
1.3
V
0.3
2
mA
1
mA
1.0
s
3.0
s
0.8
s
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