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BU2722AF_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon Power Transistors
Product Specification
Silicon Power Transistors
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BU2722AF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-emitter sustaining voltage
VEBO
Emitter-base breakdown voltage
VCEsat Collector-emitter saturation voltage
VBEsat Emitter-base saturation voltage
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
CONDITIONS
IC=100mA ;IB=0,L=25mH
IE=1mA ;IC=0
IC=4.5A IB=1.0A
IC=4.5A IB=1.0A
VCB=BVCBO IE=0
TC=125
VEB=7.5V; IC=0
IC=0.1A ; VCE=5V
IC=4.5A ; VCE=1V
MIN TYP. MAX UNIT
825
V
7.5
V
1.0
V
1.0
V
1.0
2.0
mA
1.0
mA
22
4.5
10
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