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| BU2527DF Datasheet, PDF (2/3 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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Product Specification
Silicon NPN Power Transistors
www.jmnic.com
BU2527DF
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
VEBO
Emitter-base breakdown voltage
IE=600mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=8A ;IB=1.6A
VBEsat Emitter-base saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=8A ;IB=1.6A
VCE=BVCES; VBE=0
TC=125
VEB=6V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=5V
hFE-2
DC current gain
IC=8A ; VCE=5V
CC
Collector capacitance
IE=0 ; VCB=10V f=1MHz
VF
Diode forward voltage
IF=8A
MIN TYP. MAX UNIT
800
V
7.5
13.5
V
5.0
V
1.1
V
1.0
2.0
mA
110
mA
11
5
10
145
pF
2.0
V
JMnic
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