BLF404_15 Datasheet, PDF (2/16 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – UHF power MOS transistor

Philips Semiconductors
UHF power MOS transistor
Product specification
BLF404
FEATURES
• High power gain
• Easy power control
• Gold metallization
• Good thermal stability
• Withstands full load mismatch
• Designed for broadband operation.
PINNING
PIN
1, 8
2, 3
4, 5
6, 7
DESCRIPTION
source
gate
source
drain
APPLICATIONS
handbook, halfpage
8
5
• Communication transmitters in the VHF/UHF range with
a nominal supply voltage of 12.5 V.
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS
power transistor in an 8-lead SOT409A SMD package with
a ceramic cap.
1
Top view
4
MBK150
Fig.1 Simplified outline SOT409A.
QUICK REFERENCE DATA
RF performance at T_mb ≤ 60 °C in a common source test circuit.
MODE OF OPERATION
f
(MHz)
V_DS
(V)
P_L
(W)
G_p
(dB)
η_D
(%)
CW class-AB
500
12.5
4
≥10
≥50
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Jan 29
2