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BFS505_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor | |||
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Philips Semiconductors
NPN 9 GHz wideband transistor
Product speciï¬cation
BFS505
FEATURES
⢠Low current consumption
⢠High power gain
⢠Low noise figure
⢠High transition frequency
⢠Gold metallization ensures
excellent reliability
⢠SOT323 envelope.
PINNING
PIN
DESCRIPTION
Code: N0
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is intended for low power amplifiers,
oscillators and mixers particularly in
RF portable communication
equipment (cellular phones, cordless
phones, pagers) up to 2 GHz.
handbook, 2 columns
3
1
Top view
2
MBC870
Fig.1 SOT323.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
Ptot
hFE
fT
GUM
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power gain
noise ï¬gure
open emitter
â
RBE = 0
â
â
up to Ts = 147 °C; note 1
â
IC = 5 mA; VCE = 6 V; Tj = 25 °C 60
IC = 5 mA; VCE = 6 V; f = 1 GHz; â
Tamb = 25 °C
Ic = 5 mA; VCE = 6 V; f = 900 MHz; â
Tamb = 25 °C
Ic = 1.25 mA; VCE = 6 V;
â
f = 900 MHz; Tamb = 25 °C
â
20
V
â
15
V
â
18
mA
â
150 mW
120 250
9
â
GHz
17
â
dB
1.2 1.7 dB
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
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