BFR520T_2015 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 9 GHz wideband transistor

Philips Semiconductors
NPN 9 GHz wideband transistor
Product specification
BFR520T
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT416 (SC-75) package.
APPLICATIONS
Wideband applications such as
satellite TV tuners, cellular phones,
cordless phones, pagers etc., with
signal frequencies up to 2 GHz.
DESCRIPTION
Silicon NPN transistor encapsulated
in a plastic SOT416 (SC-75) package.
fpage
3
PINNING
PIN
DESCRIPTION
1 base
2 emitter
3 collector
1
Top view
2
MBK090
Marking code: N2.
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V_CBO
V_CES
I_C
P_tot
h_FE
f_T
G_UM
F
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
maximum unilateral power
gain
noise figure
open emitter
−
R_BE = 0
−
−
up to T_s = 75 °C; note 1
−
I_C = 20 mA; V_CE = 6 V; T_j = 25 °C
60
I_C = 20 mA; V_CE = 6 V; f = 1 GHz; −
T_amb = 25 °C
I_C = 20 mA; V_CE = 6 V; f = 900 MHz; −
T_amb = 25 °C
I_C = 5 mA; V_CE = 6 V; f = 900 MHz; −
T_amb = 25 °C
−
20
V
−
15
V
−
70
mA
−
150 mW
120 250
9
−
GHz
15
−
dB
1.1 1.6 dB
Note
1. T_s is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
R_BE = 0
open collector
up to T_s = 75 °C; note 1
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−65
−
MAX.
20
15
2.5
70
150
+150
150
UNIT
V
V
V
mA
mW
°C
°C
2000 Apr 03
2