BFQ19_15 Datasheet, PDF (2/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFQ19
DESCRIPTION
NPN transistor in a SOT89 plastic
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for use in UHF and
microwave amplifiers such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers
etc.
The transistor features very low
intermodulation distortion and high
power gain. Due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PINNING
PIN
DESCRIPTION
Code: FB
1 emitter
2 collector
3 base
page
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CEO
I_C
P_tot
f_T
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
C_re
feedback capacitance
F
noise figure
CONDITIONS
TYP.
open base
−
−
up to T_s = 145 °C (note 1)
−
I_c = 50 mA; V_CE = 10 V; f = 500 MHz; 5.5
T_j = 25 °C
I_c = 10 mA; V_CE = 10 V; f = 1 MHz; 1.3
T_amb = 25 °C
I_c = 50 mA; V_CE = 10 V; Z_s = opt.;
3.3
f = 500 MHz; T_amb = 25 °C
MAX.
15
100
1
−
−
−
UNIT
V
mA
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_stg
T_j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
f > 1 MHz
up to T_s = 145 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN.
−
−
−
−
−
−
−65
−
MAX.
20
15
3.3
100
150
1
150
175
UNIT
V
V
V
mA
mA
W
°C
°C
September 1995
2