BFQ18A_15 Datasheet, PDF (2/6 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 4 GHz wideband transistor

Philips Semiconductors
NPN 4 GHz wideband transistor
Product specification
BFQ18A
DESCRIPTION
NPN transistor in a plastic SOT89
envelope intended for application in
thick and thin-film circuits. It is
primarily intended for MATV
purposes.
PINNING
PIN
DESCRIPTION
Code: FF
1 emitter
2 collector
3 base
page
1
2
3
Bottom view
MBK514
Fig.1 SOT89.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
f_T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
C_re
feedback capacitance
d_im
intermodulation distortion
CONDITIONS
TYP. MAX. UNIT
open emitter
open base
− 25 V
− 18 V
− 150 mA
up to T_s = 155 °C (note 1)
−1
I_C = 100 mA; V_CE = 10 V; f = 500 MHz; 4 −
T_j = 25 °C
I_C = 0; V_CE = 10 V; f = 10.7 MHz
1.2 −
I_C = 80 mA; V_CE = 10 V; R_L = 75 Ω;
−
−60
V_o = 700 mV; measured at
f_(p+q-r) = 793.25 MHz
W
GHz
pF
dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_stg
T_j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to T_s = 155 °C (note 1)
Note
1. T_s is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
25
V
−
18
V
−
2
V
−
150 mA
−
1
W
−65 150 °C
−
175 °C
September 1995
2