|
BFG480W_15 Datasheet, PDF (2/16 Pages) NXP Semiconductors – NPN wideband transistor | |||
|
◁ |
Philips Semiconductors
NPN wideband transistor
Preliminary speciï¬cation
BFG480W
FEATURES
⢠High power gain
⢠High efficiency
⢠Low noise figure
⢠High transition frequency
⢠Emitter is thermal lead
⢠Low feedback capacitance
⢠Linear and non-linear operation.
APPLICATIONS
⢠RF front end with high linearity system demands
(CDMA)
⢠Common emitter class AB driver.
DESCRIPTION
NPN double polysilicon wideband transistor with buried
layer for low voltage applications in a plastic, 4-pin
dual-emitter SOT343R package.
PINNING
PIN
1
2
3
4
DESCRIPTION
emitter
base
emitter
collector
handbook, halfpage
3
4
2
Top view
1
MSB842
Marking code: P6.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCEO
IC
Ptot
fT
Gmax
F
GP
ηC
collector-emitter voltage open base
â
collector current (DC)
â
total power dissipation Ts ⤠60 °C
â
transition frequency
IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C â
maximum gain
IC = 80 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C â
noise ï¬gure
IC = 8 mA; VCE = 2 V; f = 2 GHz; ÎS = Îopt
â
power gain
Pulsed; class-AB; δ < 1 : 2; tp = 5 ms;
12
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
collector efï¬ciency
Pulsed; class-AB; δ < 1 : 2; tp = 5 ms;
40
VCE = 3.6 V; f = 2 GHz; PL = 100 mW
â
4.5 V
80 250 mA
â
360 mW
23 â
GHz
16 â
dB
1.8 â
dB
â
â
dB
â
â
%
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
1998 Jul 09
2
|
▷ |