BFG25AX_15 Datasheet, PDF (2/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 5 GHz wideband transistor

Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFG25A/X
FEATURES
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
• RF low power amplifiers, such as
pocket telephones, paging
systems, with signal frequencies
up to 2 GHz.
DESCRIPTION
NPN silicon wideband transistor in a
four-lead dual emitter SOT143B
plastic package (cross emitter).
PINNING
PIN
DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
handbook, 2 c4olumns
3
1
Top view
2
MSB014
Marking code: V11.
Fig.1 SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
V_CBO
V_CEO
I_C
P_tot
h_FE
f_T
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
transition frequency
G_UM
maximum unilateral power gain
F
noise figure
CONDITIONS
T_s ≤ 165 °C
I_C = 0.5 mA; V_CE = 1 V
I_C = 1 mA; V_CE = 1 V;
f = 500 MHz; T_amb = 25 °C
I_C = 0.5 mA; V_CE = 1 V;
f = 1 GHz; T_amb = 25 °C
I_C = 0.5 mA; V_CE = 1 V;
f = 1 GHz; Γ = Γ_opt; T_amb = 25 °C
I_C = 1 mA; V_CE = 1 V; f = 1 GHz;
Γ = Γ_opt; T_amb = 25 °C
MIN.
−
−
−
−
50
3.5
−
−
−
TYP.
−
−
−
−
80
5
18
1.8
2
MAX.
8
5
6.5
32
200
−
UNIT
V
V
mA
mW
GHz
−
dB
−
dB
−
dB
1997 Oct 29
2