BF1214_15 Datasheet, PDF (2/18 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Dual N-channel dual gate MOSFET

NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data for amplifier A and B
Symbol Parameter
Conditions
V_DS
drain-source voltage
DC
I_D
drain current
DC
P_tot
total power dissipation
T_sp ≤ 107 °C
|y_fs|
forward transfer admittance f = 100 MHz; T_j = 25 °C;
I_D = 18 mA
C_iss(G1) input capacitance at gate1 f = 100 MHz
C_rss
reverse transfer capacitance f = 100 MHz
NF
noise figure
f = 400 MHz; Y_S = Y_S(opt)
f = 800 MHz; Y_S = Y_S(opt)
Xmod cross modulation
input level for k = 1 % at
40 dB AGC; f_w = 50 MHz;
f_unw = 60 MHz
T_j
junction temperature
Min Typ Max Unit
- - 6V
- - 30 mA
[1] _-
-
180 mW
27 32 37 mS
[2] _-
2.2 2.7
[2] _-
20 -
- 0.9 1.5
- 1.2 1.8
[3] _{102 105 -}
pF
fF
dB
dB
dBµV
- - 150 °C
[1] T_sp is the temperature at the soldering point of the source lead.
[2] Calculated from S-parameters.
[3] Measured in Figure 24 test circuit.
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
drain (AMP A)
source
drain (AMP B)
gate1 (AMP B)
gate2
gate1 (AMP A)
Simplified outline Symbol
654
AMP A
G1A
DA
123
G2
S
G1B
DB
AMP B
sym119
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
BF1214
-
plastic surface-mounted package; 6 leads
Version
SOT363
BF1214_1
Product data sheet
Rev. 01 — 30 October 2007
© NXP B.V. 2007. All rights reserved.
2 of 18