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| 2SD2439_15 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Darlington Power Transistors | |||
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Product Specification
Silicon NPN Darlington Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=50mA; IB=0
VCEsat Collector-emitter saturation voltage IC=7 A;IB=7m A
VBEsat Base-emitter saturation voltage
IC=7 A;IB=7m A
ICBO
Collector cut-off current
VCB=160V IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=4V
fT
Transition frequency
IC=2A ; VCE=12V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=10
IB1=-IB2=7mA
VCC=70V
hFE classifications
O
P
5000-12000 6500-20000
Y
15000-30000
www.jmnic.com
2SD2439
MIN TYP. MAX UNIT
150
V
2.5
V
3.0
V
100
A
100
A
5000
55
MHz
95
pF
0.5
s
10.0
s
1.1
s
JMnic
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