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| 2SD2296 Datasheet, PDF (2/3 Pages) Savantic, Inc. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO
Collector-emitter breakdown voltage IC=10mA ;RBE=
VEBO
Emitter-base breakdown voltage
IE=10mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A
VBEsat Base-emitter saturation voltage
IC=4.5A; IB=1.2A
ICES
Collector cut-off current
VCE=1500V ;RBE=0
hFE
DC current gain
IC=1A ; VCE=5V
Switching times
tf
Fall time
IC=4.0A
IB1=0.8A;IB2 -1.5A
www.jmnic.com
2SD2296
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
0.5
mA
8
30
0.8
s
JMnic
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