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| 2SD2095_2015 Datasheet, PDF (2/3 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – Silicon NPN Power Transistors | |||
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Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VEBO
Emitter-base breakdown voltage
IE=200mA , IC=0
VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A
VBEsat Emitter-base saturation voltage
IC=3.5A; IB=0.8A
ICBO
Collector cut-off current
VCB=500V; IE=0
hFE
DC current gain
IC=1A ; VCE=5V
fT
Transition frequency
IC=0.1A ; VCE=10V
COB
Collector output capacitance
IE=0 ; VCB=10V;f=1MHz
VF
Diode forward voltage
tf
Fall time
IF=5A
ICP=3.5A ;IB1(end)=0.8A
www.jmnic.com
2SD2095
MIN TYP. MAX UNIT
5
V
3.0
5.0
V
1.5
V
10
A
8
3
MHz
105
pF
1.6
2.0
V
0.5
1.0
s
2
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